Influence of conditions for the formation of hafnium oxide films on the structural and electrical properties of heterostructures.

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Hafnium oxide (HfO_2) films were synthesized onto silicon substrates by magnetron sputtering under various technological conditions. Research results presented structural composition of HfO2 films and electrical properties of heterostructures metal-insulator-semiconductor (Ni–HfO_2–Si) based on them.

Sobre autores

M. Afanas'ev

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia

D. Belorusov

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia

D. Kiselyov

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia

V. Luzanov

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia

G. Chucheva

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Autor responsável pela correspondência
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia

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Declaração de direitos autorais © М.С. Афанасьев, Д.А. Белорусов, Д.А. Киселев, В.А. Лузанов, Г.В. Чучева, 2023