Surface Transformation Of Ultrahigh-Temperature Ceramics HfB2-SiC-C(graphene) Under The Influence Of High-Speed Disossociated Nitrogen Jets

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In order to study the promising potential of HfB2–30 vol % SiC ultrahigh-temperature ceramic materials modified with low amounts of reduced graphene oxide for the creation of aerospace equipment intended for use in N2-based atmospheres, the effect of high-speed dissociated nitrogen flow on it has been investigated. It has been established that under the chosen conditions of exposure during the stepwise increase of the anode power supply of plasma torch and, accordingly, the influencing heat flux, at certain parameters there is a sharp increase in the surface temperature from ~1750 to 2000-2100°C. At the same time, further increase of the heat flux has no obvious and proportional effect on the temperature of the sample surface, which may indicate its high catalyticity with respect to the reactions of surface recombination of atomic nitrogen. It is shown that the surface layers of the material undergo chemical transformation (removal of silicon-containing substances, formation of a new phase based on HfN), which is accompanied by a significant change in the microstructure (formation of dendrite-like structures), which affects the optical and catalytic characteristics of the surface.

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作者简介

E. Simonenko

Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences

编辑信件的主要联系方式.
Email: ep_simonenko@mail.ru
俄罗斯联邦, Moscow, 119991

A. Kolesnikov

Ishlinskii Institute of Problems of Mechanics of the Russian Academy of Sciences

Email: ep_simonenko@mail.ru
俄罗斯联邦, Moscow, 119526

A. Chaplygin

Ishlinskii Institute of Problems of Mechanics of the Russian Academy of Sciences

Email: ep_simonenko@mail.ru
俄罗斯联邦, Moscow, 119526

A. Lysenkov

Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences

Email: ep_simonenko@mail.ru
俄罗斯联邦, Moscow, 119334

I. Nagornov

Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences

Email: ep_simonenko@mail.ru
俄罗斯联邦, Moscow, 119991

I. Lukomskii

Ishlinskii Institute of Problems of Mechanics of the Russian Academy of Sciences

Email: ep_simonenko@mail.ru
俄罗斯联邦, Moscow, 119526

S. Galkin

Ishlinskii Institute of Problems of Mechanics of the Russian Academy of Sciences

Email: ep_simonenko@mail.ru
俄罗斯联邦, Moscow, 119526

A. Mokrushin

Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences

Email: ep_simonenko@mail.ru
俄罗斯联邦, Moscow, 119991

N. Simonenko

Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences

Email: ep_simonenko@mail.ru
俄罗斯联邦, Moscow, 119991

N. Kuznetsov

Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences

Email: ep_simonenko@mail.ru
俄罗斯联邦, Moscow, 119991

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2. Fig. 1. Change in the average ceramic surface temperature (T, °C) depending on the time and parameters of the nitrogen plasma jet – the power of the anode supply (N, kW) and pressure in the pressure chamber of the plasma torch (P, Pa).

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3. Fig. 2. Temperature distribution (°C) on the surface of the ceramic sample at specific test points, as well as temperature distribution curves along the sample radius.

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4. Fig. 3. Appearance of the front surface of the HfB2–SiC–C(graphene) sample after exposure to a supersonic flow of dissociated nitrogen (a) and an X-ray (b) of the marked sections (1) and (2), as well as the initial ceramics (3); an X-ray section in the range 2q = 34°-40° (c).

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5. Fig. 4. Raman spectra of the initial sample of HfB2-SiC–C(graphene) (black) and its surface after testing: in the central region (red) and on the periphery (blue).

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6. Fig. 5. Microstructure of the surface of the HfB2–SiC–C(graphene) sample after exposure to a supersonic flow of dissociated nitrogen in the central region (according to SEM data): detectors SE2 (a–b, e), ESB (d) and In-Lens (e).

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7. Fig. 6. Microstructure of the surface of the HfB2–SiC–C(graphene) sample after exposure to a supersonic flow of dissociated nitrogen at the periphery (according to SEM data): SE2 (a–b, e), ESB (d) and In-Lens (e–z) detectors.

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