Influence of silicon dioxide on the structure and dielectric properties of barium titanate

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Abstract

The influence of silicon dioxide on the structure and dielectric properties of ceramic barium titanate was studied. The obtained results show that Si in concentrations up to 1 mol. % enters to the BaTiO3 lattice, forming the BaTi1-xSixO3 solid solution. Doping barium titanate with silicon leads to a decrease in the size of the crystal cell, a slight diffuseness of the ferroelectric phase transition, a decrease in its temperature and the appearance of signs of a relaxer ferroelectric.

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About the authors

L. N. Korotkov

Voronezh State Technical University

Author for correspondence.
Email: l_korotkov@mail.ru
Russian Federation, Voronezh, 394026

N. A. Tolstykh

Voronezh State Technical University

Email: l_korotkov@mail.ru
Russian Federation, Voronezh, 394026

N. N. Borodin

Voronezh State Technical University

Email: l_korotkov@mail.ru
Russian Federation, Voronezh, 394026

M. A. Kashirin

Voronezh State Technical University

Email: l_korotkov@mail.ru
Russian Federation, Voronezh, 394026

R. G. Anisimov

Voronezh State Technical University

Email: l_korotkov@mail.ru
Russian Federation, Voronezh, 394026

S. V. Popov

Military Educational and Scientific Centre of the Air Force N. E. Zhukovsky and Y. A. Gagarin Air Force Academy

Email: l_korotkov@mail.ru
Russian Federation, Voronezh, 394064

M. A. Pankova

Voronezh Institute of the Ministry of Internal Affairs of Russia

Email: l_korotkov@mail.ru
Russian Federation, Voronezh, 394065

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2. Fig. 1. X-ray diffraction patterns obtained for samples of the Ba1– xSrxTiO3 system: with x = 0.0 (1), 0.5 (2), 1.0 (3), 2.0 (4) and 5.0 mol.% (5).

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3. Fig. 2. Temperature dependences of permittivity for compositions with concentrations x = 0.0 (1), 0.5 (2), 1 (3), 2 (4) and 5 mol. % (5), obtained at a frequency of 1 kHz during heating of the samples. The inset shows the corresponding ε-1(T) dependences.

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4. Fig. 3. Temperature dependences of the dielectric constant for compositions with concentrations x = 0.0 (a), 0.5 (b), 2 mol. % (c), obtained at frequencies of 25 Hz - 1 MHz during heating of the samples.

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5. Fig. 4. Temperature dependences of ∆ε for barium titanate doped with silicon oxide with x = 0 (1), 0.5 (2), 1 (3), 2 (4) and 5 mol. % (5). The inset shows the dependence of lnfm on (T ‒ T0)–1.

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