English
Русский
Eco-vector
Mikroèlektronika
ISSN 0544-1269 (Print)
Menu     Archives
  • Home
  • About the Journal
    • Editorial Team
    • Editorial Policies
    • Author Guidelines
    • About the Journal
  • Issues
    • Search
    • Current
    • Retracted articles
    • Archives
  • Contact
  • Subscriptions
  • All Journals
Pay with
User
Forgot password? Register
Notifications
  • View
  • Subscribe
Search
Browse
  • By Issue
  • By Author
  • By Title
  • By Sections
  • Other Journals
  • Categories
Subscription Login to verify subscription
Information
  • For Readers
  • For Authors
  • For Librarians
Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

×
Pay with
User
Forgot password? Register
Notifications
  • View
  • Subscribe
Search
Browse
  • By Issue
  • By Author
  • By Title
  • By Sections
  • Other Journals
  • Categories
Subscription Login to verify subscription
Information
  • For Readers
  • For Authors
  • For Librarians
Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

Home > Search > Author Details

Author Details

Заленская, Н. Ю.

Issue Section Title File
Vol 53, No 4 (2024) MODELING Approximation of the Absorption Spectrum of Indium Phosphide in the Context of Simulation of the Process of Sensitivity Enhancement
 

 

Developed by ECO-VECTOR

 

Powered by EVESYST

TOP