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Mikroèlektronika
ISSN 0544-1269 (Print)
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

Home > Search > Author Details

Author Details

Каргин, Н. И.

Issue Section Title File
Vol 53, No 3 (2024) INSTRUMENTATION Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier
Vol 52, No 3 (2023) MODELING Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor
Vol 52, No 1 (2023) МОДЕЛИРОВАНИЕ ТЕХНОЛОГИЧЕСКИХ ПРОЦЕССОВ Разработка методики построения нелинейной модели метаморфного 0.15 мкм МHEMT InAlAs/InGaAs транзистора
Vol 53, No 6 (2024) INSTRUMENTATION III-nitride HEMT Heterostructures with an Ultrathin AlN Barrier: Fabrication and Experimental Application
Vol 54, No 4 (2025) КВАНТОВЫЕ ТЕХНОЛОГИИ Development of a correlator for measuring the second-order autocorrelation function of single-photon sources
 

 

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