Author Details
Асадов, С. М.
| Issue | Section | Title | File |
| Vol 53, No 2 (2024) | МОДЕЛИРОВАНИЕ | Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state |
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Keywords
Förster effect
bipolar transistor
charge qubit
dissociation
etching
fluorocarbon gases
gas temperature
ionization
kinetics
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power
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Keywords
Förster effect
bipolar transistor
charge qubit
dissociation
etching
fluorocarbon gases
gas temperature
ionization
kinetics
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power