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Mikroèlektronika
ISSN 0544-1269 (Print)
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

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Author Details

Borzdov, A. V.

Issue Section Title File
Vol 52, No 6 (2023) MODELING Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire
 

 

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