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Mikroèlektronika
ISSN 0544-1269 (Print)
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

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Author Details

Siglovaya, N. V.

Issue Section Title File
Vol 53, No 3 (2024) INSTRUMENTATION Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier
 

 

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