Plasma-chemical synthesis and study of the morphology of IGZO thin films

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Abstract

In this work, for the first time, the plasma-enhanced chemical vapor deposition (PECVD) method was used to obtain thin films of InGaZnO (IGZO) composition of various stoichiometry, morphology and phase composition. The films were synthesized using the setup described in detail in our works [1–5]. The initial substances were elementary high-purity In, Ga and Zn, the carrier gases were Ar and H2, and a mixture of (Ar–H2–O2) was used as a plasma-forming gas. The process of plasma-enhanced chemical synthesis was studied by the method of optical emission diagnostics. The mechanisms of the plasma-enhanced process were proposed. The chemical composition of the samples was determined by energy-dispersive X-ray microanalysis. The obtained samples were also examined by scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical profilometry. The electrical properties of the obtained films – type, mobility and concentration of carriers – were determined by Hall effect measurements.

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About the authors

L. A. Mochalov

Lobachevsky State University of Nizhny Novgorod; Nizhny Novgorod State Technical University named after R.E. Alekseev

Email: slapovskaya@unn.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

S. V. Telegin

Lobachevsky State University of Nizhny Novgorod

Email: slapovskaya@unn.ru
Russian Federation, Nizhny Novgorod

E. A. Slapovskaya

Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: slapovskaya@unn.ru
Russian Federation, Nizhny Novgorod

A. V. Knyazev

Lobachevsky State University of Nizhny Novgorod

Email: slapovskaya@unn.ru
Russian Federation, Nizhny Novgorod

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Supplementary files

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2. Fig. 1. Scheme of plasma-chemical setup for IGZO synthesis.

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3. Fig. 2. External view of plasma-chemical reactor during emission diagnostics of plasma-chemical process of IGZO synthesis.

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4. Fig. 3. Individual emission spectra of gases – components of plasma-forming mixture.

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5. Fig. 4. Emission spectrum of In–Ga–Zn–H2–O2 mixture plasma.

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6. Fig. 5. External view and composition of IGZO film samples.

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7. Fig. 6. Typical map of element distribution over surface for obtained IGZO samples.

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8. Fig. 7. Image of IGZO sample surface with approximate element ratio: a – 2 : 1 : 2, b – 1 : 1 : 1, c – 2 : 1 : 1.

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9. Fig. 8. Surface topography of IGZO samples with approximate element ratios: a – 2 : 1 : 2, b – 1 : 1 : 1, c – 2 : 1 : 1, obtained by semi-contact AFM.

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10. Fig. 9. Diffraction patterns of IGZO samples with approximate element ratios of 2 : 1 : 2, 1 : 1 : 1 and 2 : 1 : 1.

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