Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

Мұқаба

Дәйексөз келтіру

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Аннотация

A set of transfer and output current-voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region has been calculated. It is shown that the presence of a superlattice in the tr ansistor structure leads to the fo rmation of a negative differential conductivity region, which makes it possible to implement not only amplification, but also the generation and multiplication of high-frequency oscillations.

Авторлар туралы

O. Golikov

Lobachevsky State University of Nizhny Novgorod (NNSU)

Хат алмасуға жауапты Автор.
Email: khazanova@phys.unn.ru
Ресей, Nizhny Novgorod

I. Zabavichev

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: khazanova@phys.unn.ru
Ресей, Nizhny Novgorod

A. Ivanov

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: khazanova@phys.unn.ru
Ресей, Nizhny Novgorod

S. Obolensky

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: khazanova@phys.unn.ru
Ресей, Nizhny Novgorod

E. Obolenskaya

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: khazanova@phys.unn.ru
Ресей, Nizhny Novgorod

D. Paveliev

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: khazanova@phys.unn.ru
Ресей, Nizhny Novgorod

A. Potekhin

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: khazanova@phys.unn.ru
Ресей, Nizhny Novgorod

A. Puzanov

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: khazanova@phys.unn.ru
Ресей, Nizhny Novgorod

E. Tarasova

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: khazanova@phys.unn.ru
Ресей, Nizhny Novgorod

S. Khazanova

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: khazanova@phys.unn.ru
Ресей, Nizhny Novgorod

Әдебиет тізімі

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Әрекет
1. JATS XML
Жүктеу
2. Fig. 1. Zone diagram of a bipolar transistor with a superlattice in the emitter junction (a): (-) - energy of the valence band ceiling EV and the bottom of the G-valley of the conduction band ; ( ) - energy of the bottom of the X-valley of the conduction band ; ( ) - Fermi energy EF is taken as the zero energy level; electron passage coefficient through a short-period superlattice at zero bias for the inter-valley interaction constant α = 0.7 eV Å (b)

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Метадеректер
3. Fig. 2. Volt-ampere characteristic of a short-period superlattice with transition layers: (o) - experiment [9]; (-) - calculation

Жүктеу (98KB)
Метадеректер
4. Fig. 3. Family of transfer voltammetry characteristics of bipolar transistor (a): (- - - - -) - without superlattice; (-) - with superlattice in the emitter junction. The collector-emitter voltage UCE is 0.2, 0.4 and 0.6 V; family of output voltammetric characteristics of the bipolar transistor (b): (- - - - -) - without superlattice; (-) - with superlattice in the emitter junction. The base current IV is 1-5 µA

Жүктеу (261KB)
Метадеректер
5. Fig. 4. Dependence of the voltage drop across the superlattice (USL) on the base current at different collector-emitter voltages: UCE is 0.4, 0.6, 0.8 and 1.0 V

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