Tunnel Breakdown Bipolar Transistor

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Abstract

The article considers a bipolar transistor operating under tunnel breakdown of the collector junction. The equivalent circuit of the transistor is built from two low-voltage Zener diodes connected towards each other. Integrated circuits on complementary transistors with tunnel breakdown can be manufactured on a single crystal using CMOS technology. Experimental and theoretical studies of the physical model of the transistor are carried out. The processes of injection and extraction of charge carriers under tunnel breakdown of the collector junction lead to a decrease in the role of barrier capacitances of p-n junctions and a significant increase in the switching speed of the transistor. It is revealed that the standard SPICE model of the diode does not quantitatively reproduce the experimental data for Zener diodes with tunnel breakdown. A new expression is proposed that correctly describes the volt-ampere characteristic for this case in a wide voltage range. The transistor breakdown condition is obtained and the breakdown voltage is calculated.

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About the authors

S. Sh. Rekhviashvili

Institute of Applied Mathematics and Automation KBSC RAS

Author for correspondence.
Email: rsergo@mail.ru
Russian Federation, Nalchik

D. S. Gaev

Kabardino-Balkarian State University

Email: rsergo@mail.ru
Russian Federation, Nalchik

References

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Supplementary files

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2. Fig. 1. Equivalent circuit diagram of the transistor with tunneling breakdown (a) and the circuit for the study of static and dynamic characteristics (b).

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3. Fig. 2. Voltage transfer characteristic of the circuit in Fig. 1b (a) and VAC of the diode (b): circles - experimental data; solid lines - calculations by SPICE-model and formula (1).

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4. Fig. 3. Oscillograms of signals of the circuit in Fig. 1b: (a) - experiment; (b) - SPICE-modeling.

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5. Fig. 4. Typical structure of matched bipolar transistors with tunneling breakdown.

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