Author Details

Kwon, K.-H.

Issue	Section	Title	File
Vol 52, No 4 (2023)	ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ	Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures
Vol 52, No 2 (2023)	TECHNOLOGIES	Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture
Vol 52, No 1 (2023)	TECHNOLOGIES	Параметры газовой фазы и кинетика реактивно-ионного травления SiO₂ в плазме CF₄/C₄F₈/Ar/He