Methodology of Production of Photo-Sensitive Elements on Ptsi Basis

封面

如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

Schottky barrier diodes based on PtSi-Si contact can be used as detectors for registration of radiation in the infrared spectral region. However, the quantum efficiency of such receivers is very low compared to photodetectors based on narrow-gap semiconductors and p-n junctions. To increase the quantum efficiency of Schottky receivers, as it will be shown below, they are made in the form of the so-called “optical cavity”, and the thickness of PtSi should not exceed 100 A0. For this purpose we have developed a technological mode of multilayer metallization to obtain thin PtSi-Si contacts.

全文:

受限制的访问

作者简介

E. Kerimov

Azerbaijan State Technical University

编辑信件的主要联系方式.
Email: E_Kerimov.fizik@mail.ru
阿塞拜疆, Baku

参考

  1. Poole C., Owens F. Nanotechnologies. — Moscow: Technosphere, 2010. 336 p.
  2. Shapochkin M.B. Statistical physics / M.B. Shapochkin. M.: Publishing house of the Moscow Physical Society, 2004. 85 p.
  3. Goldade V.A., Pinchuk L.S. Physics of condensed state. Belarusian Science, 2009. 648 p.
  4. Parfenov V.V. Quantum-dimensional structures in electronics: optoelectronics. — Kazan: KSU, 2007. 16 p.
  5. Frolov V.D. Dimensional effect in the electron yield work / V.D. Frolov, S.M. Pimenov, V.I. Konov, E.N. Lubnin // Russian nanotechnologies. 2008. V. 3. P. 102.
  6. Kudrik Ya.Y., Shinkarenko V.V., Slepokurov V.S., Bigun R.I., Kudrik R.Y. Methods for Determination of Schottky Barrier Height from Volt-Ampere Characteristics // Optoelectronics and Semiconductor Technology, 2014, issue. 49, p. 21–28.
  7. Shik A. Ya., Bakueva L.G., Musikhin S.F., Rykov S.A. Physics of Low-Dimensional Systems. — Saint Petersburg: Nauka, 2001. 160 p.

补充文件

附件文件
动作
1. JATS XML
下载
2. Fig. 1. Technological scheme of fabrication of structures with BS on the basis of PtSi-Si contact

下载 (1MB)
索引源数据

版权所有 © Russian Academy of Sciences, 2024