Features of upsets formation in VLSI under pulsed ionizing radiation

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Abstract

The analysis of upset occurrence in very large-scale integrated circuits (VLSI) under the influence of pulsed ionizing radiation of various nature is carried out. Upsets in VLSI under gamma or electron pulses, first of all, are determined the effects of rail span collapse, due to volume ionization of semiconductor structures. The features of upsets occurrence due to the non-stationary latchup and several possible competing effects are analyzed. Non-stationary surface radiation effects and fast annealing of radiation defects can lead, mainly, to temporary parametric failures, which depend on the dose rate. Single event effects under the influence of pulsed beams of neutrons, protons or ions are considered.

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About the authors

A. I. Chumakov

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) – JSC Specialized Electronic Systems

Author for correspondence.
Email: aichum@spels.ru
Russian Federation, Moscow

References

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2. Fig. 1. Calculated normalized dependences of the absorbed dose rate for the occurrence of failures at different inertias of external circuits (RC). τi is determined from the signal levels of 0.7Umx and 0.25Umx (a) and - 0.5Umx 0.18Umx (b). Symbols are numerical calculations, approximation curves using τi

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3. Fig. 2. Typical change in the UBR in the DRAM depending on the pulse duration: 1 - power supply sag, 2 - loss of information in the memory cells, 3 - total approximating dependence of the form (1)

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4. Fig. 3. Changes in the number of failed cells as a function of time after irradiation with an electron pulse:  - test field "0", • - test field "1" [4]

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5. Fig. 4. Change in the dose resistance level from the duration of the IR pulse

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6. Fig. 5. Change in the number of fluence failures during pulsed ion irradiation: a – neon; b – xenon

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