Vol 53, No 5 (2024)

Microwave plasma (generation frequency 2.45 GHz, power 200–1000 W, pressure 0.2–10 mTorr) is excited and maintained in two main modes: (1) at continuous microwave power and low magnetic fields (B = 300–450 G) under a superdense (N_e > N_cr = 7.4 ´ 10¹⁰ cm⁻³) plasma and low plasma density (N_e < N_cr); and (2) in high magnetic fields (B = 750–1000 G), close to the ECR condition. The peculiarities of plasma generation under the ECR condition and at the second harmonic of cyclotron resonance are studied.

The paper describes a scheme of a quantum beam-splitter that transforms a state of a spatial photonic qubit based on two modes due to an energy exchange between the modes and quantum dots (QDs). By controlling the interaction time, it is possible to obtain the required superposition of the basis single-photon states of the qubit at the output of the device. In addition, the beam-splitter allows the generation entangled two-photon NOON states. Using the Förster effect to control the energy exchange between the QDs makes it possible to increase the intermode distance and suppress the undesirable direct mode interaction. As an example, a beam-splitter based on a two-dimensional photonic crystal with a temperature and structural frequency tuning is considered.

A brief overview of the current state of extreme ultraviolet (UV, EUV in English transcription), or, also, X-ray lithography at a wavelength of 13.5 nm in the world is given. The problems and prospects for the development of this technology in the coming years are discussed. A new concept of X-ray lithography in Russia is being developed at the Institute of Microstructure Physics of the Russian Academy of Sciences. The substantiation of the advantages and prospects of the feasibility of lithography at a wavelength new to lithography of 11.2 nm is given. A brief overview of the domestic level of development of critical technologies necessary for the creation of an X-ray lithograph is given.

Impact of the depth of a quantum barrier in the form of a tunnel-thin charge-depletion carbon layer in the enriched noncrystalline carbon template on non-dissipative transport and field electron emission has been studied. It has been shown that cross-current nonlinearities in current variables in heterostructures with static low-field electric effects and current-voltage curve parameters of the field electron emission in the strong pulse electric fields with microsecond duration are determined by the parameters of quantum barrier and by the implementation of resonant tunneling conditions with different zero levels of size quantization energy.

A thermoelectric cooling and thermal control system for electronic devices is considered. Based on a mathematical model using the operating characteristics of a serial thermoelectric module as initial data, calculations of the energy characteristics of a thermoelectric cooling system were carried out, taking into account its thermal resistances. The calculation results are presented in the form of diagrams, which allow for a coordinated selection of the system’s thermal resistances, ensuring the specified values of the cooling capacity and temperature difference.

The paper considers the application of the mathematical apparatus of spots for neuromorphic devices on crossbars of memory elements, the architecture of which corresponds to the technique of computing in memory. The apparatus of spots allows to represent and process semantic information in the form of mental imagery, as well as to model reasoning in a form inherent to a person. In particular, these are deductive, inductive, abductive, as well as non-monotonic reasoning, when conclusions are made on the basis of existing knowledge, and obtaining new knowledge can change the conclusions. The apparatus of spots is the mathematical basis for creating neuromorphic devices with the technique of computing in memory, capable of not only representing semantic information in an imaginary form, but also modeling imaginative thinking. This will solve a major problem for modern deep neural networks associated with the possibility of random, causeless errors.

The results of a study of the temperature dependences of the breakdown voltage of high-power nLDMOS transistors with a long drift region with topological norms of 0.5 microns are discussed. The main attention is focused on the effect of the mechanism of generation and passivation of traps at the Si/SiO2 interface in strong electric fields. The dependence of the breakdown voltage in the ambient temperature range from -60 °C to 300 °C has been experimentally and theoretically analyzed and the temperature range from 25 °C to 220 °C, where the breakdown voltage is almost constant, has been determined. The possibility of restoring the breakdown voltage level after a long period of rest is considered, which is a prerequisite for extending the life of the device.

The review is devoted to the analysis of the role of high -temperature annealing as a technological procedure in technologies for obtaining graphene films and creating structures for nanoelectronics based on them. As is well known, one of the ways to obtain graphene is a high -temperature annealing of the SIC single crystals. This method allows you to obtain high quality graphene films, but the significant disadvantages of this method are the high annealing temperature, which creates serious problems of sampling pollution, and the small sizes of monocrystalline domains of the resulting graphene. The method of obtaining graphene by annealing structures with solid carbon layers deposited onto the nickel film on the dielectric substrate was widespread. In this case, grafene is obtained between a nickel film and a substrate. The annealing of graphene films, regardless of the method of their obtaining, is a means of cleaning the surface of graphene from adsorbed pollution and improving its crystalline structure. It was revealed that annealing can lead to different results for isolated graphene films and for graphene structures used in nanoelectronics devices.